plasma chemical vapor deposition

英 [ˈplæzmə ˈkemɪkl ˈveɪpə(r) ˌdepəˈzɪʃn] 美 [ˈplæzmə ˈkemɪkl ˈveɪpər ˌdepəˈzɪʃn]

网络  等离子体化学气相沉积; PCVD法; 等离子体化学气相沉积法

化学



双语例句

  1. Under the catalytic effect of nickel particles, spring-like carbon filaments were synthesized through microwave plasma chemical vapor deposition.
    以镍为催化剂,利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
  2. Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis
    由SiCl4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断
  3. The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
    采用傅立叶红外吸收谱和紫外-可见透射谱研究了螺旋波等离子体增强化学气相沉积法制备的氢化非晶氮化硅薄膜的原子间键合结构和光学特性。
  4. Fluorinated amorphous carbon films ( a C ∶ F) were deposited by microwave cyclotron resonance plasma chemical vapor deposition ( MWECR CVD) using benzene ( C 6H 6) and trifluoromethane ( CHF 3) as source gases.
    用苯(C6H6)和三氟甲烷(CHF3)混合气体作源气体,采用永磁微波电子回旋共振等离子体化学气相沉积(MWECRCVD)技术,制备了氟化非晶碳膜(aC∶F)。
  5. The hydrogen plasma was excited by the technology of helicon-wave plasma chemical vapor deposition ( HWP-CVD).
    利用螺旋波等离子体化学气相沉积(HWP-CVD)技术,以氢气为反应气体产生等离子体。
  6. Hydrogenated amorphous carbon films ( a C: H) were prepared in an electron cyclotron resonance plasma chemical vapor deposition system with benzene as a gas source.
    用苯作工作气体,在一个电子回旋共振(ECR)微波等离子体化学气相沉积系统中制备了含氢非晶碳膜(a-C:H)。
  7. Ultrafine TiO_2 particles were synthesized by TiCl_4 and O_2 in radio frequency plasma chemical vapor deposition reactor.
    利用TiCl_4+O_2体系,在高频等离子体化学气相淀积反应器中合成了纯度高、粒度细的TiO_2粒子。
  8. Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
    以镍片为基板材料,利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。
  9. Nanocrystalline Si films were deposited on Si ( 100) and glass substrate by helicon wave plasma chemical vapor deposition ( HWPCVD) technique with SiH_4 as reaction gases.
    采用螺旋波等离子体化学气相沉积(HWPCVD)技术,以SiH4作为源反应气体在Si(100)和玻璃衬底上制备了纳米Si薄膜。
  10. Diamond films were synthesized by microwave plasma chemical vapor deposition ( MWPCVD) in a quartz bell jar.
    在石英钟罩式微波等离子体化学气相沉积实验装置中研究了基片位置对金刚石薄膜沉积质量的影响。
  11. Effect of plasma chemical vapor deposition parameters on electron property in Ar plasma
    等离子体化学气相沉积参量对Ar等离子体电子特性的影响
  12. The performance of c BN ( Cubic Boron Nitride) and the methods for preparation of c BN coating such as the plasma enhanced pulsed laser deposition and the hot filament enhanced plasma chemical vapor deposition are introduced.
    介绍了cBN的性能和制备cBN涂层的方法(等离子体增强脉冲激光沉积法和热丝辅助射频等离子体CVD法);
  13. The cubic boron nitride films have been synthesized by hot filament assisted RF plasma chemical vapor deposition ( CVD) from the reactive gases of B_2H_6 and NH_3 on silicon substrate.
    本文研究了热灯丝射频等离子体CVD法合成的立方氮化硼薄膜(c-BN),反应气体是8_2H_6和NH_3,衬底材料为Si单晶。
  14. Influence of gas pressure on the content of non diamond phase carbon in diamond films, grown in CH 4/ H 2 gas mixture by microwave plasma chemical vapor deposition ( MWPCVD), was studied.
    在水冷反应室式MWPCVD装置中以CH4和H2为反应气体进行了金刚石膜的沉积实验,研究了反应气体的压强对金刚石膜中非金刚石碳相含量的影响。
  15. A microwave plasma chemical vapor deposition method was used to deposit a-Si: H films at high rate.
    本文报道了用微波等离子体化学气相淀积(MP&CVD)技术从SiH4+H(?)进行a-Si∶H薄膜的高速淀积研究。
  16. Study on Synthetic Silica Glass by Plasma Chemical Vapor Deposition
    等离子体化学气相沉积合成石英玻璃的基础研究
  17. Large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. It improved deposition rate and films quality efficiently.
    大电流热阴极辉光放电用于等离子体化学气相沉积金刚石膜,有效地提高了沉积速率和膜品质。
  18. Production of a-CH films by hollow cathode discharge plasma chemical vapor deposition
    采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜
  19. The samples were prepared by helicon wave plasma chemical vapor deposition technique. Raman scattering, infrared absorption and optical absorption measurements were used to analyze the microstructure, hydrogen bonding configurations and energy band structures of the deposited films.
    所用样品采用螺旋波等离子体化学气相沉积技术制备,利用Raman散射、红外吸收和光学吸收技术对薄膜的微观结构、氢的键合特征以及能带结构特性进行了分析。
  20. The homogeneity of single mode optical fibers made by the PCVD ( Plasma Chemical Vapor Deposition) process is studied.
    研究了用等离子体化学汽相沉积工艺(PCVD)制备单模光纤的均匀性问题。
  21. Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance ( ECR) microwave acetone plasma chemical vapor deposition ( CVD) method.
    利用电子回旋共振(ECR)微波等离子体辅助化学气相沉积技术、工作气氛为丙酮,在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
  22. Temperature sensor of Cr metal membrane made by radio frequency plasma chemical vapor deposition is discussed.
    采用等离子体溅射方法制备了Cr金属薄膜式温度传感器。
  23. A very important application areas is microwave plasma chemical vapor deposition ( MPCVD).
    其中一个很重要的应用领域便是微波等离子体化学气相沉积(MPCVD)。
  24. Diamond like carbon ( DLC) films were prepared by middle frequency plasma vapor deposition method from different hydrocarbon source gases at varying voltages using the plasma chemical vapor deposition system.
    本文用改装的等离子体化学气相沉积系统,采用中频等离子体气相沉积技术沉积了类金刚石碳(DLC)膜。
  25. In this work, high quality hBN films were prepared on ( 100) oriented Si wafers from gas mixture of He-N2-H2-BF3 by microwave plasma chemical vapor deposition.
    本研究采用微波等离子体化学气相沉积方法以及He-N2-BF3-H2的混合气源系统在(100)取向的Si片上沉积出了高质量的六方氮化硼(hBN)薄膜。
  26. In this paper, boron-doped nanocrystalline and polycrystalline diamond films with different boron contents were prepared on Si ( 100) substrates through controlling B/ C ratio in the gas by microwave plasma chemical vapor deposition using trimethyl boron as a boron source.
    本论文采用微波等离子体化学气相沉积技术,以三甲基硼为硼源,通过控制B/C比例,在Si(100)基片上沉积了不同硼掺杂量的纳米晶和多晶金刚石薄膜。
  27. In this thesis, amorphous carbon films were deposited on silicon ( 111) substrate by microwave plasma chemical vapor deposition with a mixture of acetylene and hydrogen.
    本论文以乙炔和氢气的混合气体为反应气源,采用微波等离子体化学气相沉积法在硅(111)衬底上制备非晶碳膜。
  28. Hydrogen plasma generally generated by DC, RF and microwave has numerous potential applications in plasma chemical vapor deposition, plasma reaction kinetics, chemical synthesis and other research work.
    氢等离子体一般用直流、射频和微波等放电方式产生,已经被广泛用在等离子体化学气相沉积(CVD)、等离子体反应动力学及化学合成等研究工作中。